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Proceedings Paper

Qualitative analysis of haze defects
Author(s): Jaehyuck Choi; Soowan Koh; Sunghun Ji; Byung-Cheol Cha; Seong-Woon Choi; Woo-Sung Han
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Paper Abstract

We created haze defects on the PSM mask surface using ArF haze accelerator while the mask was previously cleaned by SPM and SC1 solutions. Then we directly analyzed the defects on the surface using TOF-SMS. The comprehensive analysis of TOF-SIMS signifies that the defects mainly consist of hydrocarbons, Na, K, Cl, F, Mg, Al, etc., which have probably come from previous procedures, fab environments, storage materials, handling steps, or pellicle materials. This fact implies the exclusion of sulfate or ammonium ions from the mask surface should not be enough for the realization of haze-free PSM masks. In addition, complete removal of residual hydrocarbons deposited through previous procedures and perfect protection against environmental contaminants from fab air, storage materials, handling steps, or pellicle materials should be further accomplished.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 63492S (20 October 2006); doi: 10.1117/12.685733
Show Author Affiliations
Jaehyuck Choi, Samsung Electronics Co., Ltd. (South Korea)
Soowan Koh, Samsung Electronics Co., Ltd. (South Korea)
Sunghun Ji, Samsung Electronics Co., Ltd. (South Korea)
Byung-Cheol Cha, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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