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Proceedings Paper

Error rate improvement of super-RENS random signal with the minimum mark length of 75nm in 405nm 0.85 NA system
Author(s): Jaecheol Bae; Jooho Kim; Inoh Hwang; Hyunki Kim; Jinkyung Lee; Hyunsoo Park; Insik Park; Junji Tominaga
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Paper Abstract

We report the error rate improvement of super-resolution near field structure (Super-RENS) write-once read-many (WORM) disk at a blue laser optical system. (Laser wavelength 405nm, numerical aperture 0.85) We used a disk of which carrier level (CL) of 75nm is improved from -26.3 dBm to -19.0 dBm. We controlled the equalization (EQ) profile characteristics and used the adaptive 5 symbol write strategy and advanced high tap partial-response maximum likelihood (PRML) technique in order to improve the bit error rate (bER) characteristics of the super-RENS random signal. As a result, we obtained bER of 10-4 level with new signal processing techniques and bit error analysis process. This result shows high feasibility of super-RENS technology for practical use in the near future.

Paper Details

Date Published: 22 June 2006
PDF: 6 pages
Proc. SPIE 6282, Optical Data Storage 2006, 628217 (22 June 2006); doi: 10.1117/12.685237
Show Author Affiliations
Jaecheol Bae, SAMSUNG Electronics Co., Ltd. (South Korea)
Jooho Kim, SAMSUNG Electronics Co., Ltd. (South Korea)
Inoh Hwang, SAMSUNG Electronics Co., Ltd. (South Korea)
Hyunki Kim, SAMSUNG Electronics Co., Ltd. (South Korea)
Jinkyung Lee, SAMSUNG Electronics Co., Ltd. (South Korea)
Hyunsoo Park, SAMSUNG Electronics Co., Ltd. (South Korea)
Insik Park, SAMSUNG Electronics Co., Ltd. (South Korea)
Junji Tominaga, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 6282:
Optical Data Storage 2006
Ryuichi Katayama; Tuviah E. Schlesinger, Editor(s)

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