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Proceedings Paper

Investigation of external feedback effects on relative intensity noise characteristics of 405 nm InAlGaN laser diodes
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Paper Abstract

The external feedback effect on the relative intensity noise characteristics of 405 nm InAlGaN laser diode has been analyzed taking into account the spontaneous emission noise and the high frequency modulation of the injection current. A Langevin diffusion model was exploited to characterize its relative intensity noise. The spontaneous emission noise components were quantitatively evaluated from the optical gain properties of the InAlGaN multiple quantum well active regions by using the multiband Hamiltonian for the strained wurtzite crystals. The extracted parameters were applied to the rate equations taking into account the external feedback and external current modulation effects. The simulation results were investigated to optimize the relative intensity noise characteristics.

Paper Details

Date Published: 22 June 2006
PDF: 8 pages
Proc. SPIE 6282, Optical Data Storage 2006, 628221 (22 June 2006); doi: 10.1117/12.685192
Show Author Affiliations
Jong Chang Yi, Hongik Univ. (South Korea)
Jin-Yong Kim, LG Electronics (South Korea)


Published in SPIE Proceedings Vol. 6282:
Optical Data Storage 2006

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