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Proceedings Paper

Near-field spectroscopic analysis of the mode structure in high-power diode lasers based on a double barrier separate confinement heterostructure
Author(s): Anna Kozlowska; Andrzej Maląg; Robert Pomraenke; Julien Renard; Christoph Lienau
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Paper Abstract

An analysis of the mode structure of high-power double-barrier separate confinement DB SCH diode lasers is presented. The devices are characterized by very low vertical beam divergence (13 - 22°, depending on the design version). Modelling of the fundamental mode distribution for three different design versions of DB SCH diode lasers is discussed and the results are compared to a macroscopic characterization of the devices (far-field directional characteristics and photocurrent spectra). Microscopic measurements of the near field distribution of these diode lasers with subwavelength spatial resolution are performed by employing a Near-field Photocurrent (NPC) technique. The mode structure of diode lasers is directly visualized giving indications about the interplay between the heterostructure design and the emission characteristics.

Paper Details

Date Published: 19 October 2006
PDF: 9 pages
Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 63680X (19 October 2006); doi: 10.1117/12.685124
Show Author Affiliations
Anna Kozlowska, Institute of Electron Technology (Poland)
Andrzej Maląg, Institute of Electronic Materials Technology (Poland)
Robert Pomraenke, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Julien Renard, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Christoph Lienau, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Carl von Ossietzky Univ. Oldenburg (Germany)


Published in SPIE Proceedings Vol. 6368:
Optoelectronic Devices: Physics, Fabrication, and Application III
Joachim Piprek; Jian Jim Wang, Editor(s)

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