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Proceedings Paper

Growth and characterization of single crystal InAs nanowire arrays and their application to plasmonics
Author(s): S. M. Prokes; H. D. Park; O. J. Glembocki
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Paper Abstract

The growth of single crystal InAs nanowire arrays on crystalline and amorphous substrates is described. This method is quite simple and fast, and uses only a bare InAs substrate as a source and a gold colloid on the growth substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the gold colloid size and the nanowire length controlled by the growth time and growth temperature. By a proper choice of substrate, parallel, non-interacting nanowire arrays can be formed, as well as arrays exhibiting a cross-over geometry. These geometries can have a significant impact on the plasmonic properties, specifically on surface enhanced Raman (SERS). Results indicate a significantly enhanced SERS signal for nanowire arrays which contain wire crossings, which is explained in terms of electric field "hot" spots.

Paper Details

Date Published: 19 October 2006
PDF: 10 pages
Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 63700Q (19 October 2006); doi: 10.1117/12.685022
Show Author Affiliations
S. M. Prokes, U.S. Naval Research Lab. (United States)
H. D. Park, U.S. Naval Research Lab. (United States)
O. J. Glembocki, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 6370:
Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics
Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

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