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Proceedings Paper

Low background photodetectors based on AIVBVI alloys
Author(s): Vladimir F. Chishko; Nikolay B. Zaletaev
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Paper Abstract

The performance of Pb0.8Sn0.2Te photodiodes and photoconductive detectors based on Pb1-x-ySnxGeyTe:In epitaxial films has been investigated in a wide temperature interval and at various background fluxes. It was found that dark current of photodiodes in the temperature range 30 K < T < 100 K was due to the generation-recombination in depletion region and at T < 30 K tunneling through defects in the depletion region dominated and incremental resistance R0tun at T < 30 K was exponential function of Rog-r at T = 77 K. Detectivity of more than 5 x 1012 cmHz1/2W-1 limited by preamplifier noise at a background of 1 x 1012 cm-2s-1 and T = 30 K was experimentally achieved. Pb1-x-ySnxGeyTe:In epitaxial film photoconductive detectors had sensitivity in the spectral range λ < 15μm and it exponentially depended on temperature and varied from 105 A/W at T = 10 K to 102 A/W at T = 30 K. Noise of the photoconductive detectors was independent of background flux when it varied from 1012 cm-2s-1 to 1018 cm-2s-1. Multielement photoconductive detectors based on these films were fabricated and D* = 1.7 x 1013 cmHz1/2W-1 at T ≤ 25 K was achieved.

Paper Details

Date Published: 8 September 2006
PDF: 9 pages
Proc. SPIE 6307, Unconventional Imaging II, 63070T (8 September 2006); doi: 10.1117/12.683924
Show Author Affiliations
Vladimir F. Chishko, ORION Research and Development Association (Russia)
Nikolay B. Zaletaev, ORION Research and Development Association (Russia)


Published in SPIE Proceedings Vol. 6307:
Unconventional Imaging II
Victor L. Gamiz; Paul S. Idell; Marija S. Strojnik, Editor(s)

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