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Proceedings Paper

Improved modeling of the photoconductivity of amorphous semiconductors for the purposes of the microelectronics
Author(s): A. A. Sherchenkov; A. B. Apalkov
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Paper Abstract

Method of the modeling of the density of charged states in the band gap of amorphous semiconductor was developed. Modeling procedure including of the fitting of different experimental dependencies of the photoconductivity with using of the same DOS model was developed. These method and procedure were applied to the a-SiGe:H films fabricated by LF (55 kHz) PECVD. The densities of charged states in the band gap of amorphous semiconductor were estimated and redistribution processes were analyzed. It was shown that deterioration of the optoelectronic properties of a-SiGe:H alloys with the increase of the germanium content is connected with the increase of recombination centers due to the Nd+ charged localized states. The fraction of these states appreciably increases with the increase of germanium content in the alloy.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601T (10 June 2006); doi: 10.1117/12.683563
Show Author Affiliations
A. A. Sherchenkov, Moscow Institute of Electronic Technology (Russia)
A. B. Apalkov, Moscow Institute of Electronic Technology (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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