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Proceedings Paper

Simulation of RTD with the use of one- and two-band combined models
Author(s): I. I. Abramov; I. A. Goncharenko; N. V. Kolomejtseva
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Paper Abstract

The results of physical process simulations for different structures of resonant-tunneling diode (RTD) are described in the paper. One-band [1,2] and two-band combined numerical models of RTD are involved in investigation. Two coupled Schodinger equations are solved in two-band combined model. It allows to consider Γ-X intervalley scattering influence on electron transport in RTD. The developed one- and two-band models permits to take into account of charge influence in different regions of device, including surface charge, classical and quantum-mechanical regions interaction, shape of energy-band offset on heterojunctions, other scattering mechanisms, resistances of near-contact regions. The models allow to simulate RTD with arbitrary number of barriers and calculate have functions, charge and potential distributions, transmission and IV- characteristics depending on different material parameters and structure design. The proposed models have been included in numerical simulation subsystem NS-RTS-NANODEV, which is a part of nanoelectronic device system NANODEV. In the paper the comparison of simulation results carried out with the use of proposed one- and two-band combined models of RTD are presented. It allows to verify significance of Γ-X intervalley scattering for some material systems in a number of cases.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601S (10 June 2006); doi: 10.1117/12.683557
Show Author Affiliations
I. I. Abramov, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
I. A. Goncharenko, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
N. V. Kolomejtseva, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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