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Proceedings Paper

Simulation of the vertical MOSFET with electrically variable source-drain junctions
Author(s): I. A. Horin; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev
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Paper Abstract

Vertical MOSFET with electrically variable source-drain junctions has been simulated in ISE TCAD. Novel structure has been developed thoroughly. New concepts and materials like high-k and silicide have been used. For the present some electrical characteristics have been investigated by modeling. Marginal on-off drain current values has been obtained and analyzed. Parasitic capacitance, resistances and time delays have been calculated. As a result, the vertical MOSFET with electrically variable junctions has excellent electrical characteristics and very high cut-off frequency.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601R (10 June 2006); doi: 10.1117/12.683554
Show Author Affiliations
I. A. Horin, Institute of Physics and Technology (Russia)
A. A. Orlikovsky, Institute of Physics and Technology (Russia)
A. E. Rogozhin, Institute of Physics and Technology (Russia)
A. G. Vasiliev, Institute of Physics and Technology (Russia)
Moscow State Institute of Radioengineering, Electronics and Automation (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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