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Proceedings Paper

Compact physical modeling of fully depleted SOI MOSFET
Author(s): G. I. Zebrev; M. S. Gorbunov
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Paper Abstract

A new compact physical model for fully-depleted SOl MOSFET has been proposed. The key feature of this model is analytical solution of current continuity equation and the introduction and derivation in explicit form of the control parameter having a physical sense the ratio of diffusion component of total drain current to its drift current component. Compact closed-form expressions for drain current, distributions of chemical and electrostatic potential along the channel for all operation modes have been obtained.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601P (10 June 2006); doi: 10.1117/12.683547
Show Author Affiliations
G. I. Zebrev, Moscow Engineering Physics Institute (Russia)
M. S. Gorbunov, Moscow Engineering Physics Institute (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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