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Proceedings Paper

Monte Carlo simulation of device structures with one-dimensional electron gas
Author(s): Vladimir Borzdov; Fadei Komarov; Vadim Galenchik; Dmitry Pozdnyakov; Andrey Borzdov; Oleg Zhevnyak
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Paper Abstract

In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device structure based on GaAs-in-AlAs quantum wire versus gate voltage, the electric current in armchair single-wall carbon nanotube versus strength of electric field applied along the channel and temperature are presented.

Paper Details

Date Published: 10 June 2006
PDF: 11 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601N (10 June 2006); doi: 10.1117/12.683545
Show Author Affiliations
Vladimir Borzdov, Belarusian State Univ. (Belarus)
Fadei Komarov, Belarusian State Univ. (Belarus)
Vadim Galenchik, Belarusian State Univ. (Belarus)
Dmitry Pozdnyakov, Belarusian State Univ. (Belarus)
Andrey Borzdov, Belarusian State Univ. (Belarus)
Oleg Zhevnyak, Belarusian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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