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Proceedings Paper

Use of thermomigration in MEMS technology
Author(s): Eduard Yu. Buchin; Yuri I. Denisenko
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Paper Abstract

The physical principles of thermomigration process and technical approaches utilizing this process at fabrication various kinds of silicon-based MEMS devices have been presented. The specific examples applied to silicon bulk micromachining, producing of p-n junction isolation and vertical through-wafer interconnects, and monolithic joining of silicon package has been considered. On the above-mentioned subjects, the review contains available information extracted from more than 30 scientific articles and patents.

Paper Details

Date Published: 10 June 2006
PDF: 10 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601L (10 June 2006); doi: 10.1117/12.683500
Show Author Affiliations
Eduard Yu. Buchin, Institute of Microelectronics and Informatics (Russia)
Yuri I. Denisenko, Institute of Microelectronics and Informatics (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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