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Proceedings Paper

Combined method of copper electroplating deposition and low temperature melting for damascene technology
Author(s): E. N. Redichev; D. G. Gromov; S. A. Gavrilov; A. I. Mochalov; R. M. Ammosov
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Paper Abstract

The combined method of trench filling by copper for damascene technology has been developed. The method is based on copper deposition by ordinary electroplating and following low temperature melting of copper layer. The thickness of wetting layer has been optimized. The importance of seed layer surface treatment is demonstrated. It is shown that the thermal annealing at 650oC allows to dispose of voids appearing at copper electrochemical deposition into trenches.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601H (10 June 2006); doi: 10.1117/12.683493
Show Author Affiliations
E. N. Redichev, Moscow Institute of Electronic Technics (Russia)
D. G. Gromov, Moscow Institute of Electronic Technics (Russia)
S. A. Gavrilov, Moscow Institute of Electronic Technics (Russia)
A. I. Mochalov, Moscow Institute of Electronic Technics (Russia)
R. M. Ammosov, Moscow Institute of Electronic Technics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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