Share Email Print

Proceedings Paper

Investigations of bipolar magnetotransistor
Author(s): R. D. Tikhonov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

(BMT) with well. Investigation by the modem two-dimensional TCAD of the volume SRH-recombination are studied of the lateral bipolar magnetotransistor with the diffusion well for the physicists of working and high sensitivity designs. Magnetic field effect create volume concentration-recombination mechanism of the current negative sensitivity. For raising sensitivity is conduct study of series lateral bipolar magnetotransistor with base in well. Joining the contacts of base and well creates a threshold of operating, negative magnetosensitivity, growing of sensitivity in weak magnetic field. Transistor can serve the generator electron-hole plasma. Device has volumetric generation-recombination mechanism of sensitivity, new principle of getting maximum relative sensitivity on the current 2000 1/T in the magnetic field of the Earth.

Paper Details

Date Published: 10 June 2006
PDF: 12 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601G (10 June 2006); doi: 10.1117/12.683491
Show Author Affiliations
R. D. Tikhonov, SMC Technological Ctr. MSIEE (Russia)

Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top