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Proceedings Paper

Effective electrostatic discharge protection elements for CMOS circuits
Author(s): V. A. Gergel'; N. M. Gorshkova
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Paper Abstract

A new electric circuit layout and physical structure are proposed for an element of protection against electrostatic discharges. The new element features twice as small resistance to the electrostatic discharge current. The reduced resistance is obtained by using additional transistors implementing feedback. The use of the new electric circuit layout and of a new simulation technique that takes into account substrate transistors made it possible to reduce the element's area 1.5-fold and its electric capacity 1.6-fold.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601F (10 June 2006); doi: 10.1117/12.683489
Show Author Affiliations
V. A. Gergel', Institute of Radio Engineering and Electronics (Russia)
N. M. Gorshkova, Institute of Radio Engineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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