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Proceedings Paper

Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures
Author(s): Victor M. Mordvintsev; Sergey E. Kudrjavtsev; Valeriy L. Levin
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Paper Abstract

Physical bases of the electroforming phenomenon are described in view of conceptions developed about it during last years as the process of self-formation of a nanometer insulating gap in a conductive medium which is formed on a dielectric surface in some general enough conditions. The structure and the characteristics of a cell of non-volatile electrically reprogrammable memory made by methods of silicon technology and based on the phenomenon of electroforming in open Si-SiO2-W "sandwich"-structures with thickness of silicon dioxide about 20 nm is given. The information in such memory is coded by the sizes (and resistance) of a self-forming conducting nanostructure, therefore already from physical principles it should possess the high thermal and radiation resistance that is confirmed experimentally. On the made samples of a small capacity matrix (3×3 cells) all the functions of non-volatile electrically reprogrammable memory have been shown.

Paper Details

Date Published: 10 June 2006
PDF: 11 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601C (10 June 2006); doi: 10.1117/12.683486
Show Author Affiliations
Victor M. Mordvintsev, Institute of Microelectronics and Informatics (Russia)
Sergey E. Kudrjavtsev, Institute of Microelectronics and Informatics (Russia)
Valeriy L. Levin, Institute of Microelectronics and Informatics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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