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Proceedings Paper

Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods
Author(s): Nikolai Yarykin; Renhua Zhang; George Rozgonyi
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Paper Abstract

The DLTS and admittance measurements were performed on the MOS and Schottky diodes formed on the strained-Si/SiGe/Si heterostructures. Several DLTS features were observed and analyzed, and properties of the peculiar Dl peak were studied in detail. Temperature dependence of the SiGe layer conductivity was extracted from the C(T) and G(T) curves. The analysis of ability of the DLTS technique to detect defects in the thin top layer is given.

Paper Details

Date Published: 10 June 2006
PDF: 9 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626017 (10 June 2006); doi: 10.1117/12.683403
Show Author Affiliations
Nikolai Yarykin, Institute of Microelectronics Technology (Russia)
Renhua Zhang, North Carolina State Univ. (United States)
George Rozgonyi, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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