Share Email Print
cover

Proceedings Paper

Structural and nonlinear-optical studies of ultrathin Si/Si02 multiple quantum wells
Author(s): Andrei A. Lomov; Arseniy G. Sutyrin; Denis Yu. Prokhorov; Tatyana V. Dolgova; Andrei A. Fedyanin; Oleg A. Aktsipetrov
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Optical second harmonic generation (SHG) in amorphous Si/SiO2 multiple quantum wells (MQW) is studied by means of SHG spectroscopy, SHG interferometric spectroscopy and X-ray double-axes reflectometry of the MQW samples with the Si quantum well thickness d ranging from 1.00 to 0.25 nm. The electron density profiles obtained from X-ray reflectometry data confirm multilayer structure presence and refine growth data on d values. The observed modification of the SHG spectra upon decreasing d is interpreted using combination of the resonant two-subband approximation for the nonlocal optical response of each quantum well with the generalized transfer-matrix formalism for the description of light propagation across the whole MQW structure. Agreement with the experiment shows that the description of the quadratic optical response of the MQW structure within the model of a nonlocal piecewise-continuous medium remains valid on the sub-nanometer scale.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 626016 (10 June 2006); doi: 10.1117/12.683402
Show Author Affiliations
Andrei A. Lomov, A.V. Shubnikov Institute of Crystallography (Russia)
Arseniy G. Sutyrin, A.V. Shubnikov Institute of Crystallography (Russia)
Denis Yu. Prokhorov, A.V. Shubnikov Institute of Crystallography (Russia)
Tatyana V. Dolgova, M.V. Lomonosov Moscow State Univ. (Russia)
Andrei A. Fedyanin, M.V. Lomonosov Moscow State Univ. (Russia)
Oleg A. Aktsipetrov, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

© SPIE. Terms of Use
Back to Top