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Proceedings Paper

Forming matrix nanostructures in silicon
Author(s): A. V. Barkhudarov; S. A. Gavrilov; A. A. Golishnikov; M. G. Putrya
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Paper Abstract

The technology of fabrication of the self-organizing ranked mask on base porous aluminum for etching nanosize pores in silicon has been considered. The experiments on obtaining the nanosize matrix structures in silicon have been conducted.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600Z (10 June 2006); doi: 10.1117/12.683293
Show Author Affiliations
A. V. Barkhudarov, Moscow Institute of Electronic Engineering (Russia)
S. A. Gavrilov, Moscow Institute of Electronic Engineering (Russia)
A. A. Golishnikov, Moscow Institute of Electronic Engineering (Russia)
M. G. Putrya, Moscow Institute of Electronic Engineering (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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