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Proceedings Paper

Measurements of electron mobility-lifetime product and surface recombination velocity of Cd1-xZnxTe radiaton detectors for different surface processing conditions
Author(s): Yunlong Cui; Michael Groza; Utpal N. Roy; Arnold Burger; Ralph B. James
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Paper Abstract

We explored the dependence of electron mobility-lifetime product (μτ) and surface recombination velocity ( S/μ) on surface processing and temperature for Cd1-xZnxTe (CZT) radiation detectors. The surfaces of the CZT crystals were mechanically polished and then chemically etched with 2% bromine-in-methanol. Different regions at the Au contacts were illuminated with light at a wavelength of 650-, 800-, 900-, and 940-nm. The position-dependent and temperature- dependent values of the electron mobility-lifetime product and surface recombination velocity were measured using a direct current (DC) photoconductivity technique. The study revealed that this technique is a valuable and practical method to measure the spatial- and temperature-variations of the surface recombination velocity and bulk lifetime for CZT detectors. We discuss the correlation between the DC photoconductivity and measurements of the detector performance.

Paper Details

Date Published: 30 August 2006
PDF: 9 pages
Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 63190C (30 August 2006); doi: 10.1117/12.682356
Show Author Affiliations
Yunlong Cui, Fisk Univ. (United States)
Michael Groza, Fisk Univ. (United States)
Utpal N. Roy, Fisk Univ. (United States)
Arnold Burger, Fisk Univ. (United States)
Ralph B. James, Brookhaven National Lab. (United States)


Published in SPIE Proceedings Vol. 6319:
Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII
F. Patrick Doty; Larry A. Franks; Arnold Burger; H. Bradford Barber; Hans Roehrig; Ralph B. James, Editor(s)

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