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Proceedings Paper

Advanced photomask repair technology for 65-nm lithography
Author(s): Fumio Aramaki; Tomokazu Kozakai; Yasuhiko Sugiyama; Masashi Muramatsu; Yoshihiro Koyama; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Ryoji Hagiwara; Anto Yasaka; Tatsuya Adachi; Yoshiyuki Tanaka; Osamu Suga; Naoki Nishida; Youichi Usui
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Paper Abstract

Repair technology for 65nm generation photomasks requires more accurate shape and transmittance. The objective of this study is to evaluate FIB repair process with low acceleration voltage. The evaluation items were imaging impact, defect visibility, repaired shape, through focus behavior, repeatability of edge placement and controllability of repair size. In conclusion, we confirmed that FIB repair process with low acceleration voltage is applicable to 65nm generation photomasks.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628310 (20 May 2006); doi: 10.1117/12.681859
Show Author Affiliations
Fumio Aramaki, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Masashi Muramatsu, SII NanoTechnology Inc. (Japan)
Yoshihiro Koyama, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies Inc. (Japan)
Naoki Nishida, HOYA Corp. (Japan)
Youichi Usui, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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