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Proceedings Paper

Dark field double dipole lithography (DDL) for 45 nm node and beyond
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Paper Abstract

Extending ArF lithography to the 45nm node at a lower k1 puts a heavy demand on resolution enhancement techniques (RETs), exposure tools, and lithography friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DETs) are promising methods to extend lithography manufacturing to the 45nm node at k1 factors around 0.3. Double dipole lithography (DDL) is becoming a popular RET candidate for foundries and memory makers to pattern the poly gate active layer. Double exposure method or double pattern technique (DPT), using ternary 6% attenuated PSM (attPSM) is a good imaging solution that can reach and likely go beyond the 45nm node. In this work, back end of the line (BEOL) metal like test structures were used for developing a model-based dark field DDL method. We share our findings of using DDL for patterning 45nm node trench structures with binary intensity mask (BIM) on a dry high NA ArF scanner.

Paper Details

Date Published: 20 May 2006
PDF: 12 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830U (20 May 2006); doi: 10.1117/12.681854
Show Author Affiliations
Stephen Hsu, ASML MaskTools (United States)
Martin Burkhardt, IBM Research (United States)
Jungchul Park, ASML MaskTools (United States)
Douglas Van Den Broeke, ASML MaskTools (United States)
J. Fung Chen, ASML MaskTools (United States)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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