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Proceedings Paper

Optimization of TaSix absorber stack for EUV mask
Author(s): Shinpei Tamura; Koichiro Kanayama; Yasushi Nishiyama; Tadashi Matsuo; Akira Tamura
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Paper Abstract

We evaluated and optimized Ta-based absorber added by Si for EUV mask. Consequently, we confirmed TaSix based bi-layer absorber stack has the following performances; It has amorphous morphology without columnar structure advantageous to fabricate fine pattern with smaller line edge roughness. In order to realize better position accuracy, it has low internal stress capable to control. As an optical property, it has low DUV reflectance at 257nm which facilitates to perform defect inspection. As it can be etched anisotropcally by conventional halogen gases without using hard mask, we achieved almost vertical sidewall profile of 120nm lines and spaces pattern and promising CD control accuracy.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830J (20 May 2006); doi: 10.1117/12.681842
Show Author Affiliations
Shinpei Tamura, Toppan Printing Co., Ltd. (Japan)
Koichiro Kanayama, Toppan Printing Co., Ltd. (Japan)
Yasushi Nishiyama, Toppan Printing Co., Ltd. (Japan)
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Akira Tamura, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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