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Proceedings Paper

A study of damage mechanisms during EUV mask substrate cleaning
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Paper Abstract

Defects on an extreme ultraviolet (EUV) mask blank strongly depend on the defects on the mask blank substrate. Any imperfection on the substrate surface in the form of a particle, pit, and scratch will appear on the EUV mask blank. In this article, we study the effect of the cleaning process on the creation of defects on the EUV substrate and mask blank. Added particles could be removed by improving the cleaning tool and the cleaning process. Pits are generally created when many large defects, particularly glass-like materials, are present on the surface and the substrate is exposed to a high energy cleaning step. Comparison of different high energy steps in a typical cleaning process suggests that the megasonic step most likely creates pits. Current cleaning processes developed in the Mask Blank Development Center (MBDC) have been optimized so that no added pits or particles are observed after using them.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830I (20 May 2006); doi: 10.1117/12.681841
Show Author Affiliations
Abbas Rastegar, Sematech, Inc. (United States)
Sean Eichenalub, Sematech, Inc. (United States)
Kurt Goncher, Sematech, Inc. (United States)
Pat Marmillion, Sematech, Inc. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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