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Proceedings Paper

EUV mask development status at ASET and DNP
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Paper Abstract

Dry etch process of ASET developed EUV blank was evaluated. ASET blank used TaGeN for absorber layer and Cr for buffer layer. CF4 gas process and Cl2 gas process were evaluated for TaGeN absorber layer dry etching. Because of advantages of small buffer layer damage and etching stability, CF4 gas process was selected as our standard process for TaGeN etching. Cl2 and O2 mixture gas was used for Cr buffer layer dry etching. After buffer layer dry etching, EUV reflectivity and wafer print were tested. AFM nano-machining was applied to absorber layer defect repair. Repair results were evaluated using SEM, AFM and wafer print test. EUV mask fabrication process was also developed for commercial EUV blank.

Paper Details

Date Published: 20 May 2006
PDF: 9 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830H (20 May 2006); doi: 10.1117/12.681840
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Akiko Fujii, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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