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Proceedings Paper

Robust OPC technique using aerial image parameter
Author(s): Mikio Oka; Shinichiro Suzuki; Kazuyoshi Kawahara; Kensuke Tsuchiya; Kazuhisa Ogawa; Hidetoshi Ohnuma
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Paper Abstract

The mainstream of resolution enhancement techniques (RET) to critical layers is model-based optical-proximity-effect-correction (OPC) at the 90-nm node and below. For model-based OPC, the simulation model is calibrated using a test pattern transferred onto the wafer on a best dose and best focus condition, so process variations (i.e. focus, exposure dose, etc) cause pinching or bridging (open or short error), otherwise called a hotspot. The technique of reducing hotspots by sub-resolution assist features (SRAFs) and litho-friendly layout are already proposed. However, these methods sometimes cannot improve hotspots by design layouts or the post-OPC shapes. We have developed the technique which improves hotspots by additional modification to the post-OPC patterns of hotspots.

Paper Details

Date Published: 20 May 2006
PDF: 9 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628333 (20 May 2006); doi: 10.1117/12.681821
Show Author Affiliations
Mikio Oka, Sony Corp. (Japan)
Shinichiro Suzuki, Sony Corp. (Japan)
Kazuyoshi Kawahara, Sony Corp. (Japan)
Kensuke Tsuchiya, Sony Corp. (Japan)
Kazuhisa Ogawa, Sony Corp. (Japan)
Hidetoshi Ohnuma, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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