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Proceedings Paper

Model-based insertion of assist features using pixel inversion method: implementation in 65 nm node
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Paper Abstract

Sub-resolution assist feature (SRAF) is widely used to improve lithographic performance. Rule-based SRAF insertion has been working well for one dimensional cases but becomes quite complex for 2-dimensional arbitrary layout. In addition, the best rule generation involves a large amount of simulation and empirical data collection. Therefore model-based SRAF insertion is much more desirable especially for 65nm node and below. In this work we use the newly developed pixel inversion method for a true model-based SRAF insertion. We'll extend our work from contact layer to lines and spaces layer to demonstrate the capability of this method for all critical layers of 65nm node. This method will be used in combination with model-based OPC to achieve the required overlapping process window and CD control. Furthermore, the manufacture issues such as mask making time and mask inspection will be examined and reported.

Paper Details

Date Published: 20 May 2006
PDF: 12 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832Y (20 May 2006); doi: 10.1117/12.681816
Show Author Affiliations
Chi-Yuan Hung, Semiconductor Manufacturing International Corp. (China)
Qingwei Liu, Semiconductor Manufacturing International Corp. (China)
Kyohei Sakajiri, Mentor Graphics Corp. (United States)
Shumay D. Shang, Mentor Graphics Corp. (United States)
Yuri Granik, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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