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Proceedings Paper

Fracture friendly optical proximity correction for non-Manhattan features
Author(s): John Nogatch; Robert Lugg; Mike Miller; Frank Amoroso
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Paper Abstract

Optical Proximity Correction improves wafer image fidelity by combining small correction shapes with the original pattern data. Although these small shapes improve the exposure of the wafer image, the increase in total figure count results in longer fracture processing and E-beam writing time to create the mask. In this paper we describe alternative OPC treatment for jogs on non-Manhattan features, which reduce the additional figures produced, and make the data friendlier to the fracture and mask fabrication phases. Illustrations of example pattern data and improvement results in terms of figure counts are described.

Paper Details

Date Published: 20 May 2006
PDF: 5 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832Q (20 May 2006); doi: 10.1117/12.681804
Show Author Affiliations
John Nogatch, Synopsys Inc. (United States)
Robert Lugg, Synopsys Inc. (United States)
Mike Miller, Synopsys Inc. (United States)
Frank Amoroso, Synopsys Inc. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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