Share Email Print

Proceedings Paper

Shot number estimation for EB direct writing for logic LSI utilizing character-build standard-cell layout technique
Author(s): Yoshihiko Kajiya; Akihiro Nakamura; Masaya Yoshikawa; Takeshi Fujino
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Electron Beam direct writing (EBDW) technology is the most cost-effective lithography tool for small-volume logic-LSI fabrication. The EB exposure time will be greatly reduced by applying character-projection (CP) aperture. But the applicable number of CP aperture is limited to 25-400 depending upon EB lithography apparatus. The cell-based logic LSIs are composed of standard-cells (SCs) whose number is 400-1000. Therefore, it is impossible to implement all SCs as CP apertures, because the SCs are placed to 4-directions in general. We had proposed the new technique named 'Character-Build (CB) standard-cell', and demonstrate the most of the combination-logic SCs can be composed by only 17 CP apertures. In this paper, not only combination-logic SCs but also sequential-logic SCs are considered. The number of EB-shots and the chip-area are estimated for some sample circuits. Compared to the simply-limited SCs, The EB shot number is 30-40% reduced by using proposed CB standard-cell, when the CP aperture numbers are 20-30. Moreover, CB standard-cell was advantageous in the module area. Considering 2-directional placement of SCs, the combination of the EB apparatus with 50-100 CP apertures and the CB standard-cell technique may be the best method for high-speed EB direct-writing.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832M (20 May 2006); doi: 10.1117/12.681798
Show Author Affiliations
Yoshihiko Kajiya, Ritsumeikan Univ. (Japan)
Akihiro Nakamura, Ritsumeikan Univ. (Japan)
Masaya Yoshikawa, Ritsumeikan Univ. (Japan)
Takeshi Fujino, Ritsumeikan Univ. (Japan)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

© SPIE. Terms of Use
Back to Top