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Proceedings Paper

New proximity effect correction for under 100 nm patterns
Author(s): Masahiro Shoji; Nobuyasu Horiuchi; Tomoyuki Chikanaga; Takashi Niinuma; Dai Tsunoda
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Paper Abstract

As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the energy scattering. It can correct accurately in reasonable computing time. We will explain how to improve efficiency of energy deposit simulation and evaluate the algorithm in this paper.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832L (20 May 2006); doi: 10.1117/12.681796
Show Author Affiliations
Masahiro Shoji, Nippon Control System Corp. (Japan)
Nobuyasu Horiuchi, Nippon Control System Corp. (Japan)
Tomoyuki Chikanaga, Nippon Control System Corp. (Japan)
Takashi Niinuma, Nippon Control System Corp. (Japan)
Dai Tsunoda, Nippon Control System Corp. (Japan)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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