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Proceedings Paper

The characterization of line-width in mask using spectrophotometry
Author(s): Kyoung-Yoon Bang; Yo-Han Choi; Han-June Yoon; Hae-Young Jeong; Yong-Hoon Kim; Seung-Woon Choi; Hee-Sun Yoon; Woo-Sung Han
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Paper Abstract

Spectrophotometry has been applied to the characterization of pattered mask line-width. Variations in the line-width by few nanometers can be distinguished by comparing spectrum profiles of reflectance or transmittance in spectrophotometry. It can be theoretically explained that the variations in the spectrum profiles are caused by CD bias of the patterned film. Experimental results also show that the positions of the spectrums along wavelength axis are related to the CD bias measured under CD-SEM. As a result, both spectra could be used to estimate quickly the line-width of patterned mask without in-depth analysis.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832H (20 May 2006); doi: 10.1117/12.681791
Show Author Affiliations
Kyoung-Yoon Bang, Samsung Electronics Co., Ltd. (South Korea)
Yo-Han Choi, Samsung Electronics Co., Ltd. (South Korea)
Han-June Yoon, Samsung Electronics Co., Ltd. (South Korea)
Hae-Young Jeong, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Seung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Hee-Sun Yoon, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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