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Proceedings Paper

Quartz etch challenges for 45 nm phase-shift masks
Author(s): Scott A. Anderson; Madhavi Chandrachood; Michael Grimbergen; Toi Yue Becky Leung; Ibrahim M. Ibrahim; Sheeba Panayil; Ajay Kumar
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Paper Abstract

One means of extending the limits and lifetime of current lithography platforms for 45nm and beyond is the development of resolution enhancement techniques (RET) in the form of optical phase-shifting masks (PSM). By employing optical interference from 180° shifted lithography emission, PSM masks are able to enhance feature resolution at the wafer. This is particularly important for sub-wavelength features (i.e., features with critical dimensions less than the lithography wavelength) where line resolution can be severely degraded without such techniques. For these PSMs, the challenge is to provide highly uniform quartz etch performance across the entire active area of the mask for various feature sizes and local loads. Micro-loading (a.k.a. RIE lag or reactive ion etch lag) and phase angle range are key performance parameters to control. As the demands for these parameters tighten and mask costs rise, strict performance control is required for all PSM mask varieties utilized in the mask shop. In this paper we will discuss process improvements for the Applied Materials Tetra IITM chromeless phase lithography (CPL) etch application. In particular, the discussion will focus on recent process improvements in phase uniformity and RIE lag for our chrome hard mask CPL etch process. Results from modifications to the etch process are presented. Feature profiles are also discussed with examples showing near vertical sidewalls and no micro-trenching.

Paper Details

Date Published: 20 May 2006
PDF: 9 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831X (20 May 2006); doi: 10.1117/12.681761
Show Author Affiliations
Scott A. Anderson, Applied Materials Inc. (United States)
Madhavi Chandrachood, Applied Materials Inc. (United States)
Michael Grimbergen, Applied Materials Inc. (United States)
Toi Yue Becky Leung, Applied Materials Inc. (United States)
Ibrahim M. Ibrahim, Applied Materials Inc. (United States)
Sheeba Panayil, Applied Materials Inc. (United States)
Ajay Kumar, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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