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Proceedings Paper

Mask etcher data strategy for 45 nm and beyond
Author(s): Richard Lewington; Ibrahim M. Ibrahim; Sheeba Panayil; Ajay Kumar; John Yamartino
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Paper Abstract

Mask Etching for the 45nm technology node and beyond requires a system-level data and diagnostics strategy. This necessity stems from the need to control the performance of the mask etcher to increasingly stringent and diverse requirements of the mask production environment. Increasing mask costs and the capability to acquire and consolidate a wealth of data within the mask etch platform are primary motivators towards harnessing data mines for feedback into the mask etching optimization. There are offline and real-time possibilities and scenarios. Here, we discuss the data architecture, acquisition, and strategies of the Applied Materials Tetra IITM Mask Etch System.

Paper Details

Date Published: 20 May 2006
PDF: 6 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831W (20 May 2006); doi: 10.1117/12.681760
Show Author Affiliations
Richard Lewington, Applied Materials Inc. (United States)
Ibrahim M. Ibrahim, Applied Materials Inc. (United States)
Sheeba Panayil, Applied Materials Inc. (United States)
Ajay Kumar, Applied Materials Inc. (United States)
John Yamartino, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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