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Proceedings Paper

Chrome etch challenges for 45 nm and beyond
Author(s): Madhavi Chandrachood; Michael Grimbergen; Ibrahim M. Ibrahim; Sheeba Panayil; Ajay Kumar
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Paper Abstract

Requirements to meet the 45nm technology node place significant challenges on Mask makers. Resolution Enhancement Techniques (RET) employed to extend optical lithography in order to resolve sub-resolution features, have burdened mask processes margins. Also, Yield compromises loom with every nanometer of error incurred on the Mask and the Device platforms. RET techniques, such as Optical Proximity Correction (OPC), require the Mask Etcher to achieve exceptionally tight control of Critical Dimensions (CD). This ensures OPC feature integrity on the mask and resultant image fidelity of OPC structures, as well as, subsequently high and sustainable yields. This paper talks about 45 nm Chrome etch challenges and how Applied Materials Tetra IITM etcher provides solutions to these challenges.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831V (20 May 2006); doi: 10.1117/12.681759
Show Author Affiliations
Madhavi Chandrachood, Applied Materials Inc. (United States)
Michael Grimbergen, Applied Materials Inc. (United States)
Ibrahim M. Ibrahim, Applied Materials Inc. (United States)
Sheeba Panayil, Applied Materials Inc. (United States)
Ajay Kumar, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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