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Proceedings Paper

Photomask dry-etching techniques for hard mask
Author(s): Sung-Won Kwon; Young-Ju Park; Sung-Yoon Kim; Han-shin Lee; Hyuk-Joo Kwon; Seung-Woon Choi; Woo-Sung Han
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Paper Abstract

A photomask dry etch process typically uses chlorine and oxygen plasma for chrome etching with resist masking. This gas mixture leads macro- and micro-loading as different pattern density with mask-to-mask and within a mask. Thus, there have been several approaches to reduce chrome etch loading by changing etch chemistry, etch conditions and mask materials. Using hard mask material on the chrome layer can minimize chrome etch loading and reduce chrome etch bias. In this paper, chrome etch characteristics which use hard mask materials is investigated.

Paper Details

Date Published: 20 May 2006
PDF: 9 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831T (20 May 2006); doi: 10.1117/12.681756
Show Author Affiliations
Sung-Won Kwon, Samsung Electronics Co., Ltd. (South Korea)
Young-Ju Park, Samsung Electronics Co., Ltd. (South Korea)
Sung-Yoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Han-shin Lee, Samsung Electronics Co., Ltd. (South Korea)
Hyuk-Joo Kwon, Samsung Electronics Co., Ltd. (South Korea)
Seung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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