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Proceedings Paper

A study for effect of rounded contact hole pattern by laser mask writing machine onto wafer process margin
Author(s): Se-Jin Park; Kyung-Hee Yoon; Jae-Hyun Kang; Jae-Young Choi; Yong-Suk Lee; Keeho Kim
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Paper Abstract

The higher productivity of the DUV laser mask lithography system compared to the 50-KeV e-beam system offers the benefit of mask cost down at low k1 lithographic process. But the major disadvantage of the laser mask writing system is rounding effect of contact hole and line end. In this paper, we study wafer process margin effect of corner rounded contact hole and present mask CD specification of corner rounded contact hole written by DUV laser lithography system compared to 50KeV writing tool. The contact hole rounding changes contact hole area at the same mask CD and also change MEEF(Mask Error Enhancement Factor) even though the contact hole area is compensated by adjusting mask bias. If one change EBM3500 mask writer machine to Alta4300 mask writer machine for 160nm contact hole using KrF and 6% HT-PSM, one has to change mask bias, 3.2nm, to meet same wafer process condition.. The MEEF of ALTA4300 mask is 1.6% higher than that of EBM3500 mask at same effective target mask CD. And the mask CD specification written by ALTA4300 has to be set more tightly about 1.3 ~ 1.5% to meet same wafer process margin with EBM3500 mask.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831K (20 May 2006); doi: 10.1117/12.681745
Show Author Affiliations
Se-Jin Park, Dongbu Electronics (South Korea)
Kyung-Hee Yoon, Dongbu Electronics (South Korea)
Jae-Hyun Kang, Dongbu Electronics (South Korea)
Jae-Young Choi, Dongbu Electronics (South Korea)
Yong-Suk Lee, Dongbu Electronics (South Korea)
Keeho Kim, Dongbu Electronics (South Korea)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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