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Proceedings Paper

Real time analysis of the haze environment trapped between the pellicle film and the mask surface
Author(s): Jaehyuck Choi; Seungyeon Lee; Yongjin Cho; Sunghun Ji; Byung Cheol Cha; Sung Woon Choi; Woo Sung Han
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Paper Abstract

With the use of 193nm lithography, time-dependent haze problem has become a critical issue for semiconductor industry. The understanding of the conditions that create haze defects is very crucial for the future development of haze-free cleaning processes. The gaseous environment trapped between the pellicle film and the mask surface triggers photochemical reaction under laser exposure, which could result in the formation of killer (printable) defects on the mask surface. Therefore, the real time analysis of the haze environment in the trapped space could provide essential clues to the characterization of haze defect growth mechanism. This fundamental study can be applied to the invention of real-time monitoring tools for the defect growth progress on the mask surface as well as the development of haze-free cleaning processes. Here, we propose a method to analyze the gaseous space trapped between the pellicle film and the mask surface that creates a highly reactive environment.

Paper Details

Date Published: 20 May 2006
PDF: 7 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830A (20 May 2006); doi: 10.1117/12.681736
Show Author Affiliations
Jaehyuck Choi, Samsung Electronics Co., Ltd. (South Korea)
Seungyeon Lee, Samsung Advanced Institute of Technology (South Korea)
Yongjin Cho, Samsung Electronics Co., Ltd. (South Korea)
Sunghun Ji, Samsung Electronics Co., Ltd. (South Korea)
Byung Cheol Cha, Samsung Electronics Co., Ltd. (South Korea)
Sung Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo Sung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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