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Proceedings Paper

Study of higher electron beam energy for the mask production for 30 nm node technology
Author(s): Sanghee Lee; Sungho Park; Byunggook Kim; Seongwoon Choi; Woosung Han
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Paper Abstract

Recently, the mask writing technology with 50keV electron beam energy is close to its resolution limit. It will be hard to achieve 30nm node mask pattern in near future. Especially the writing of OPC and 2-D patterns will be critical issue. Furthermore, according to the shrinking of pattern, the tight mask CD uniformity is required due to large MEEF. About 2.4nm mask CD uniformity will be required in terms of 3σ. In this report, we analyze the beam energy effect on the resolution improvement using the quantitative analysis of beam blurring including the resist effect. From the experimental result, the total blur is about 45.57nm with 50keV VSB and 43.70nm with 100keV spot beam. And we compare the dose margin and linearity for each case. Dose margin by 50keV VSB is 0.96nm/%dose and 0.89nm/%dose for 100keV spot beam. We conclude that the effect by the increasing of electron beam energy is not so much significant and the reduction of the blur by electron beam column is as much as efficient. And finally we calculate the limitation of CD uniformity for each case.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628308 (20 May 2006); doi: 10.1117/12.681735
Show Author Affiliations
Sanghee Lee, Samsung Electronics Co., Ltd. (South Korea)
Sungho Park, Samsung Electronics Co., Ltd. (South Korea)
Byunggook Kim, Samsung Electronics Co., Ltd. (South Korea)
Seongwoon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woosung Han, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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