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Proceedings Paper

Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement
Author(s): Nathan Wilcox; Matt Vernon; Andrew Jamieson
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Paper Abstract

This paper includes an empirical determination of the relative CD error as a function of in-vacuum post exposure delay (PED). The effects of local pattern density and the impact of reticle proximity effect correction on the in-vacuum PED CD bias error are also considered. Results of dose compensation to improve CD uniformity on both artifact and production reticles are reviewed. The results show that by applying an exposure time dependent dose correction, the CD bias dependency upon in-vacuum PED is effectively compensated. In addition, the results show that dose compensation is effective at correcting for the in-vacuum PED dependency of local pattern density proximity errors. Finally, the paper concludes with a brief discussion of the relationship between existing reticle CD correction techniques for errors including electron beam fogging, etch loading, stable reticle process spatial CD non-uniformities and the new time dependent dose correction.

Paper Details

Date Published: 20 May 2006
PDF: 8 pages
Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628307 (20 May 2006); doi: 10.1117/12.681734
Show Author Affiliations
Nathan Wilcox, Intel Corp. (United States)
Matt Vernon, Intel Corp. (United States)
Andrew Jamieson, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6283:
Photomask and Next-Generation Lithography Mask Technology XIII
Morihisa Hoga, Editor(s)

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