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Proceedings Paper

Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier
Author(s): Ivan S. Vasil'evskii; Vladimir A. Kulbachinskii; Andrei A. Lomov; Rafik M. Imamov; Denis Yu. Prokhorov; Mihael A. Chuev; Galib B. Galiev; Stanislav S. Shirokov
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Paper Abstract

Electron transport, optical and structure properties of the shallow pseudomorphic quantum wells (QW) GaAs/InGaAs/GaAs are studied by electrophysical, photoluminescence and X-ray double-axes diffractometry methods. It is revealed that insertion of a thin AlAs potential barrier in the center of QW leads to efficient changes of subband structure and mobility. In the case of shallow and narrow quantum wells the observed decrease of mobility is due to appearance of the different scattering mechanism. X-ray diffractometry study is undertaken in order to distinguish whether it is interface roughness scattering from the introduced barrier or another scattering mechanism.

Paper Details

Date Published: 10 June 2006
PDF: 8 pages
Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600P (10 June 2006); doi: 10.1117/12.681733
Show Author Affiliations
Ivan S. Vasil'evskii, M.V. Lomonosov Moscow State Univ. (Russia)
Vladimir A. Kulbachinskii, M.V. Lomonosov Moscow State Univ. (Russia)
Andrei A. Lomov, A.V. Shubnikov Institute of Crystallography (Russia)
Rafik M. Imamov, A.V. Shubnikov Institute of Crystallography (Russia)
Denis Yu. Prokhorov, A.V. Shubnikov Institute of Crystallography (Russia)
Mihael A. Chuev, lnstitute of Physics and Technology (Russia)
Galib B. Galiev, lnstitute of UHF Semiconductor Electronics (Russia)
Stanislav S. Shirokov, lnstitute of UHF Semiconductor Electronics (Russia)


Published in SPIE Proceedings Vol. 6260:
Micro- and Nanoelectronics 2005
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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