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Proceedings Paper

Scanning nano-Raman spectroscopy of semiconducting structures
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Paper Abstract

Tip-enhanced Raman spectroscopy (TERS) using side illumination is a promising spectroscopic tool for nanoscale characterization of chemical composition, structure, stresses and conformational states of non-transparent samples. Recent progress has shown signal enhancements for a variety of samples, including break-through enhancements of semiconductors. In this work, optimization of the polarization geometry increases contrast between near-field and far-field signals on Si and improves imaging quality. Two-dimensional images of semiconductor nanostructures show reasonable agreement between topographical and TERS images. These recent TERS results using both silver- and gold-coated tips demonstrate localization of the Raman enhancement to within approximately 20 nm of the tip. Also, the enhanced Raman signal of a strained Si layer is separated from an underlying Si substrate, which is encouraging for potential strain distribution analysis of silicon nanostructures.

Paper Details

Date Published: 3 October 2006
PDF: 7 pages
Proc. SPIE 6324, Plasmonics: Nanoimaging, Nanofabrication, and their Applications II, 63240N (3 October 2006); doi: 10.1117/12.681621
Show Author Affiliations
R. D. Hartschuh, Univ. of Akron (United States)
N. Lee, Univ. of Akron (United States)
D. Mehtani, Univ. of Akron (United States)
A. Kisliuk, Univ. of Akron (United States)
M. D. Foster, Univ. of Akron (United States)
A. P. Sokolov, Univ. of Akron (United States)
J. F. Maguire, AFRL Materials and Manufacturing Directorate (United States)

Published in SPIE Proceedings Vol. 6324:
Plasmonics: Nanoimaging, Nanofabrication, and their Applications II
Satoshi Kawata; Vladimir M. Shalaev; Din Ping Tsai, Editor(s)

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