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Proceedings Paper

In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition
Author(s): Yu Wang; Min Dai; Sandrine Rivillon; Ming-Tsung Ho; Yves J. Chabal
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Paper Abstract

This paper describes the challenges faced by the microelectronics community in growing ultra-thin films using Atomic Layer Deposition and summarizes how mechanistic information derived from in situ infrared absorption spectroscopy studies can guide the growth of sub-nanometer films. Examples are drawn from the growth of high-k dielectrics (e.g. HfO2 ) on oxide-free silicon surfaces to achieve the lowest effective oxide thickness.

Paper Details

Date Published: 30 August 2006
PDF: 11 pages
Proc. SPIE 6325, Physical Chemistry of Interfaces and Nanomaterials V, 63250G (30 August 2006); doi: 10.1117/12.681331
Show Author Affiliations
Yu Wang, Rutgers Univ. (United States)
Min Dai, Rutgers Univ. (United States)
Sandrine Rivillon, Rutgers Univ. (United States)
Ming-Tsung Ho, Rutgers Univ. (United States)
Yves J. Chabal, Rutgers Univ. (United States)


Published in SPIE Proceedings Vol. 6325:
Physical Chemistry of Interfaces and Nanomaterials V
Mark Spitler; Frank Willig, Editor(s)

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