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Proceedings Paper

Modeling of avalanche photodiodes by Crosslight APSYS
Author(s): Y. G. Xiao; Z. Q. Li; Z. M. Simon Li
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Paper Abstract

Avalanche photodiodes (APDs) are being widely utilized in various application fields where a compact technology computer aided design (TCAD) kit capable for APD modeling is highly demanded. In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, avalanche photodiodes, especially the InP/InGaAs separate absorption, grading, charge and multiplication (SAGCM) APDs for high bit-rate operation have been modeled. Basic physical quantities like band diagram, optical absorption and generation are calculated. Performance characteristics such as dark- and photo-current, photoresponsivity/multiplication gain, breakdown voltage, excess noise, frequency response and bandwidth etc., are simulated. The modeling results are selectively presented, analyzed, and some of results are compared with the experimental. Device design optimization issues are further discussed with respect to the applicable features of the Crosslight APSYS within the framework of drift-diffusion theory.

Paper Details

Date Published: 7 September 2006
PDF: 8 pages
Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940Z (7 September 2006); doi: 10.1117/12.681189
Show Author Affiliations
Y. G. Xiao, Crosslight Software Inc. (Canada)
Z. Q. Li, Crosslight Software Inc. (Canada)
Z. M. Simon Li, Crosslight Software Inc. (Canada)


Published in SPIE Proceedings Vol. 6294:
Infrared and Photoelectronic Imagers and Detector Devices II
Randolph E. Longshore; Ashok Sood, Editor(s)

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