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Synthesis, mobility, and conductivity of well-defined regioregular poly(3-hexylthiophene) and diblock copolymers of regioregular poly(3-hexylthiophene)
Author(s): Geneviève Sauvé; Rui Zhang; Shijun Jia; Tomasz Kowalewski; Richard D. McCullough
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Paper Abstract

Regioregular poly(3-hexylthiophene) (RR-P3HT) has been a benchmark for organic field effect transistors containing a conjugated polymer. Here, we focus on a new class of materials that we have developed: block copolymers of RRP3HT and of a non-conjugated polymer. By varying the physical properties of the non-conjugated segment, it is possible to fine-tune the physical and electrical properties of the copolymer for various device applications. Here, we report the synthesis, UV-Vis, and conductivity of a series of block copolymers of RR-P3HT containing poly(methyl acrylate) (PMA) as the second segment. We also present preliminary results of these polymers in FET devices. We find that despite the presence of the insulating segment, these polymers have relatively high mobilities, especially when the substrate is treated with octyltrichlorosilane. For example, a mobility of 0.03 cm2V-1s-1 is reported for the block copolymer P3HT-b-PMA containing 41 mole % PMA, for a film drop-cast from a chloroform solution under ambient conditions. This work demonstrates that using block copolymers is a good approach for improving the material's properties while maintaining a high solid-state order that is critical for good OFET performance.

Paper Details

Date Published: 25 August 2006
PDF: 9 pages
Proc. SPIE 6336, Organic Field-Effect Transistors V, 633614 (25 August 2006); doi: 10.1117/12.681068
Show Author Affiliations
Geneviève Sauvé, Carnegie Mellon Univ. (United States)
Rui Zhang, Carnegie Mellon Univ. (United States)
Shijun Jia, Carnegie Mellon Univ. (United States)
Tomasz Kowalewski, Carnegie Mellon Univ. (United States)
Richard D. McCullough, Carnegie Mellon Univ. (United States)

Published in SPIE Proceedings Vol. 6336:
Organic Field-Effect Transistors V
Zhenan Bao; David J. Gundlach, Editor(s)

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