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Proceedings Paper

SONOS sensor for measurement of gamma-ray irradiation
Author(s): Wen-Ching Hsieh; Daniel Lee Hao-Tien; Hong-Sheng Xu
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Paper Abstract

In comparison with traditional sensors, semiconductor dosimeters have certain advantages because of their high sensitivity, small sizes and weights and simple readout. However in case of the MOS type Gamma radiation sensors, stored dosage data was easily volatile at high temperature. A typical Si-Oxide-Nitride-Oxide-Si (SONOS) device processed by semiconductor technology can be a candidate for nonvolatile Gamma Radiation sensors. The Gamma ray radiation induces a significant decrease of threshold voltage for SONOS. The change of threshold voltage after Gamma ray expose can be correlated to the dose of Gamma ray exposure as well. This SONOS type of Gamma radiation sensor, has the following characteristics :(1) the stored dose recorded in this SONOS device is always nonvolatile during data read and write, even at high temperature. (2) Data in the SONOS can be erased to original null state by charges injection, but it can't be annealed by high temperature. (3) Data can be accumulatively stored in the SONOS.

Paper Details

Date Published: 30 August 2006
PDF: 5 pages
Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 63190W (30 August 2006); doi: 10.1117/12.680860
Show Author Affiliations
Wen-Ching Hsieh, Minghsin Univ. of Science and Technology (Taiwan)
Daniel Lee Hao-Tien, ETOMS Electronics Corp. (Taiwan)
Hong-Sheng Xu, Minghsin Univ. of Science and Technology (Taiwan)

Published in SPIE Proceedings Vol. 6319:
Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII
F. Patrick Doty; Larry A. Franks; Arnold Burger; H. Bradford Barber; Hans Roehrig; Ralph B. James, Editor(s)

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