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Proceedings Paper

Complex studies of properties of nanostructured silicon
Author(s): A. I. Luchenko; M. M. Melnichenko; K. V. Svezhentsova; O. M. Shmyryeva
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Paper Abstract

Nanocrystalline silicon layers ( 3-35nm ) have been formed upon single-crystal silicon substrates of very large area (100 cm2), multicrystalline silicon substrates and metallurgical silicon substrates by stain etching. We studied optical and structural properties of nanocrystalline silicon by photoluminescence, reflection, scanning tunnel microscopy, scanning electron microscopy, Auger electronic spectroscopy and SIMS methods. Researches of properties of nc-Si, received by a method of chemical processing, have confirmed an opportunity of creation of this multifunctional material with stable characteristics. The authors have observed the sensors systems with use of nanocrystalline silicon as a sensitive layer, which properties depend on thickness of a received layer and are controlled by parameters of technological process. On an example of the photoluminescent sensor with nc-Si layer it is shown, that such sensor can be successfully used for definition of small concentrations of toxins (pesticides phosalone 10-8-10-9 mol/l ), and also for specific biological pollutant, such as protein components, polysaccharides, cells used during biotechnological synthesis.

Paper Details

Date Published: 31 August 2006
PDF: 11 pages
Proc. SPIE 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III, 632716 (31 August 2006); doi: 10.1117/12.680668
Show Author Affiliations
A. I. Luchenko, Taras Shevchenko Kiev National Univ. (Ukraine)
M. M. Melnichenko, National Taras Shevchenko Univ. of Kyiv (Ukraine)
K. V. Svezhentsova, Institute of Semiconductor Physics (Ukraine)
O. M. Shmyryeva, National Technical Univ. of Ukraine (Ukraine)


Published in SPIE Proceedings Vol. 6327:
Nanoengineering: Fabrication, Properties, Optics, and Devices III
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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