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Proceedings Paper

Cd0.55Mn0.45Te crystal growth, microstructure, and electrical resistivity
Author(s): M. A. Black; T. Orlova; F. Y. Lu; L. Li
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Paper Abstract

Crystals of the compound semiconductor Cd0.55Mn0.45Te were grown by modified Bridgeman technique. The resulting crystals were transparent, with a deep red color. There were no precipitates visible up to the 1.5μm resolution of the optical transmission microscopy system used. The electrical resistivity was measured to be 1x105Ωcm. The ability to grow large precipitate free crystals makes this system a good candidate for radiation detector elements. Electrical properties must be improved through better control of the concentration of electronically active impurities.

Paper Details

Date Published: 11 September 2006
PDF: 4 pages
Proc. SPIE 6319, Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII, 631913 (11 September 2006); doi: 10.1117/12.680610
Show Author Affiliations
M. A. Black, Yinnel Tech, Inc. (United States)
T. Orlova, Yinnel Tech, Inc. (United States)
F. Y. Lu, Yinnel Tech, Inc. (United States)
L. Li, Yinnel Tech, Inc. (United States)


Published in SPIE Proceedings Vol. 6319:
Hard X-Ray and Gamma-Ray Detector Physics and Penetrating Radiation Systems VIII
F. Patrick Doty; Larry A. Franks; Arnold Burger; H. Bradford Barber; Hans Roehrig; Ralph B. James, Editor(s)

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