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Proceedings Paper

Modeling of carbon nanotube-based devices: from nanoFETs to THz emitters
Author(s): Aldo Di Carlo; Alessandro Pecchia; Eleonora Petrolati; Claudio Paoloni
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Paper Abstract

In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Green's function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes. The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modern micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.

Paper Details

Date Published: 8 September 2006
PDF: 11 pages
Proc. SPIE 6328, Nanomodeling II, 632808 (8 September 2006); doi: 10.1117/12.680305
Show Author Affiliations
Aldo Di Carlo, Univ. of Rome Tor Vergata (Italy)
Alessandro Pecchia, Univ. of Rome Tor Vergata (Italy)
Eleonora Petrolati, Univ. of Rome Tor Vergata (Italy)
Claudio Paoloni, Univ. of Rome Tor Vergata (Italy)


Published in SPIE Proceedings Vol. 6328:
Nanomodeling II
Akhlesh Lakhtakia; Sergey A. Maksimenko, Editor(s)

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