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Proceedings Paper

2D InP photonic crystal fabrication process development
Author(s): Bifeng Rong; Emile van der Drift; Rob W. van der Heijden; Huub W. M. Salemink
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Paper Abstract

We have developed a reliable process to fabricate high quality 2D air-hole and dielectric column InP photonic crystals with a high aspect ratio on a STS production tool using ICP N2+Cl2 plasma. The photonic crystals have a triangular lattice with lattice constant of 400 nm and air-hole and dielectric column radius of 120 nm. Large efforts have been devoted on developing a proper mask. We obtained a perfect, clean and vertical profiled SiNX mask. The next main effort is InP pattern transfer in Cl2+N2 plasma. Etching selectivity, smooth sidewall and etch profile are directly related to plasma process condition, besides the quality of SiNX mask. We have optimized the N2+Cl2 plasma condition to obtain high aspect ratio, vertical profile and smooth sidewall InP structures. Cylindrical holes (2 micron depth) and rodlike pillars (2.4 micron height) are uniformly fabricated. An aspect ratio of 18 for 100nm trench lines has been obtained. AFM measurement evidences that etched surfaces are smooth. The root mean square roughness of pillar and hole is 0.7 nm and 0.8 nm, respectively. The optical transmission characterization of ridge waveguides has been carried out. Transmission spectrum of 1 micron wide waveguide has been obtained.

Paper Details

Date Published: 31 August 2006
PDF: 10 pages
Proc. SPIE 6327, Nanoengineering: Fabrication, Properties, Optics, and Devices III, 632715 (31 August 2006); doi: 10.1117/12.680281
Show Author Affiliations
Bifeng Rong, Delft Univ. of Technology (Netherlands)
Emile van der Drift, Delft Univ. of Technology (Netherlands)
Rob W. van der Heijden, COBRA Inter-Univ. Research Institute, Eindhoven Univ. of Technology (Netherlands)
Huub W. M. Salemink, Delft Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 6327:
Nanoengineering: Fabrication, Properties, Optics, and Devices III
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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