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Proceedings Paper

Strong photoluminescence caused by optical transitions between electron and hole Tamm-like interface states in ZnSe/BeTe heterostructures
Author(s): A. S. Gurevich; V. P. Kochereshko; A. N. Litvinov; A. V. Platonov; B. A. Zyakin; B. A. Waag; G. Landwehr
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Paper Abstract

We present an experimental data, which demonstrate a basically new mechanism of carrier radiative recombination in semiconductor heterostructures-recombination via Tamm-like interface states. Bright line was observed in photoluminescence spectra of periodical ZnSe/BeTe heterostructures at the energies, which correspond to the optical transitions between electron and hole Tamm-like interface states in studied heterosystem. Photoluminescence via Tamm-like interface states was observed for wide range excitation densities in the temperature range from 15K to 160K. It was found that for short-period ZnSe/BeTe heterostructures at low temperatures and at low excitation densities photoluminescence via Tamm-like interface states is much stronger than conventional interband radiative recombination.

Paper Details

Date Published: 30 August 2006
PDF: 11 pages
Proc. SPIE 6321, Nanophotonic Materials III, 632109 (30 August 2006); doi: 10.1117/12.680052
Show Author Affiliations
A. S. Gurevich, Ioffe Physico-Technical Institute (Russia)
V. P. Kochereshko, Ioffe Physico-Technical Institute (Russia)
A. N. Litvinov, Ioffe Physico-Technical Institute (Russia)
A. V. Platonov, Ioffe Physico-Technical Institute (Russia)
B. A. Zyakin, Ioffe Physico-Technical Institute (Russia)
B. A. Waag, Braunschweig Technical Univ. (Germany)
G. Landwehr, Univ. Würzburg (Germany)


Published in SPIE Proceedings Vol. 6321:
Nanophotonic Materials III
Zeno Gaburro; Stefano Cabrini, Editor(s)

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